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BCR503
NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=2.2k, R2=2.2k)
C 3
3
Thermal Resistance
1For calculation of R thJA please refer to Application Note Thermal Resistance
1

2 1
VPS05161
R1 R2
1 B
2 E
EHA07184
Type BCR503
Maximum Ratings Parameter
Marking XAs 1=B
Pin Configuration 2=E 3=C
Package SOT23
Symbol VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Value 50 50 10 12 500 330 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 79 C Junction temperature Storage temperature
mA mW C
Junction - soldering point 1)
RthJS
215
K/W
Jun-29-2001
BCR503
Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 10 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1 /R2 1.5 0.9 2.2 1 2.9 1.1 Vi(on) 1 1.8 Vi(off) 0.6 1.5 VCEsat 0.3 hFE 40 IEBO 3.5 ICBO 100 V(BR)CBO 50 V(BR)CEO 50 typ. max.
Unit
V
nA mA V V V k -
AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz fT 100 MHz
1) Pulse test: t < 300s; D < 2%
2
Jun-29-2001
BCR503
DC Current Gain hFE = f (IC ) VCE = 5V (common emitter configuration)
10 3
-
Collector-Emitter Saturation Voltage VCEsat = f (IC), hFE = 20
10 3
mA
10 2
hFE
10 2
10 1
IC
10 1 10 0 10 -1 -1 10
0 1 2
10
10
10
mA 10
3
10 0 0.0
0.2
0.4
0.6
V
1.0
IC
VCEsat
Input on Voltage Vi(on) = f (IC ) VCE = 0.3V (common emitter configuration)
10 3
mA
Input off voltage Vi(off) = f (IC) VCE = 5V (common emitter configuration)
10 1
mA
10 2
10 0
IC
10 1
10 0 10 -1
10 -1
10 -2 -1 10
IC
0 1
10
10
V
10
2
10 -2 0.0
0.5
1.0
V
2.0
Vi(on)
Vi(off)
3
Jun-29-2001
BCR503
Total power dissipation Ptot = f (TS )
400
mW
300
Ptot
250
200
150
100
50
0 0
20
40
60
80
100
120 C
150
TS
Permissible Pulse Load RthJS = f (tp )
Permissible Pulse Load Ptotmax / PtotDC = f (tp)
10 3
K/W
10 4
-
10 2
Ptotmax / PtotDC
10 3
10 1
10 2
10 0
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
RthJS
10 1
10 -1 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
tp
4
Jun-29-2001

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